通过多模热成像校准了电压和温度依赖的肖特基势垒高度及非均匀性
Yinfei Xie， Aihua Wu， Yuwei Zhai， Yang He， Yan Liu， Hao Li， Weiye Liu， Dawei Yan， and Huarui Sun. Multi-modal Thermography-Calibrated Barrier in Vertical β-Ga2O3 Schottky Barrier Diodes. Cell Reports Physical Science， 2025， 6: 103016.
超禁带金刚石半导体的挑战、功率器件进展与新兴恶劣环境应用
核心结论:金刚石凭借其超宽禁带与高导热性，在高压、高温、强辐射等特种应用中潜力显著，但n型掺杂与规模化制造仍是其迈向主流功率半导体的关键瓶颈。
什么是金半接触？
很多人第一次听到“金属-半导体接触”，会以为这只是“把金属电极贴到硅上”这么简单。
Implant在晶圆制造中的缺陷总结
01Implant为何“天生带伤”离子注入（Ion Implantation）常被一句话概括： 把掺杂原子“打进”半导体。
在GaN HEMT高压功率器件短路可靠性机理研究取得新发现
图6在Ta = 25°C下，分别经受Vgs = 4 V/Vdc = 100 V和Vgs = 6 V/Vdc = 300 V重复短路应力后，相对于初始器件的特性恢复曲线:阈值电压VTH;
(超)宽禁带功率半导体中的欧姆接触电阻：从基础物理到界面工程
近日，斯洛伐克科技大学Martin Weis团队在宽禁带与超宽禁带功率半导体欧姆接触电阻研究方面取得系统性进展。
《科学》（20240607出版）一周论文导读
Abstract:The control of thermal radiation by shaping its spatial and spectral emission characteristics plays a key role in many areas of science and engineering. Conventional approaches to tailoring thermal emission using metamaterials are hampered both by the limited spatial resolution of the required subwavelength material structures and by the materials’ strong absorption in the infrared. In this work， we demonstrate an approach based on the concept of topology. By changing a single parameter of a multilayer coating， we were able to control the reflection topology of a surface， with the critical point of zero reflection being topologically protected. The boundaries between subcritical and supercritical spatial domains host topological interface states with near-unity thermal emissivity. These topological concepts enable unconventional manipulation of thermal light for applications in thermal management and thermal camouflage.